Samsung is reportedly planning to redesign its 6th-generation 1c DRAM to bolster yield rates and stay ahead in its forthcoming HBM4 process.
The Significance of Samsung’s 1c DRAM in Its HBM4 Endeavor and Memory Business Stability
The tech giant from Korea is contemplating an overhaul of its 1c DRAM process, which is believed to be pivotal for the triumph of its HBM4 initiative. As revealed by ZDNet Korea, Samsung has been assessing new designs for its advanced DRAM processes since the latter half of 2024. Now, they’re repositioning their high-tech 1c DRAM to ensure the success of their upcoming HBM technologies, an area where previous HBM3 versions hit major hurdles, particularly with companies like NVIDIA showing resistance towards integration.
The report indicates that Samsung’s state-of-the-art DRAM process fell short of the anticipated yield rates—reportedly around 60%-70%—hindering the move to mass production. The core issue appears to be the dimensions of the 1c DRAM chip. Initially, Samsung aimed to shrink the chip size to boost production volume, but this approach compromised process stability, leading to reduced yield rates.
A redesign has seen Samsung Electronics increase the chip size of its 1c DRAM, with a renewed focus on yield improvements targeted for mid-year. Their priority seems to be achieving stable mass production of next-gen memory, even if it entails higher costs.
— ZDNet Korea
The development of Samsung’s 1c DRAM is critical to the eventual performance of their HBM4 products. With competitors like SK Hynix and Micron already refining their designs, Samsung is under time pressure. Following an unimpressive performance with its previous HBM3 products, it’s imperative for Samsung to align its 1c DRAM process with industry expectations.
It remains uncertain how Samsung’s 6th-generation DRAM process will evolve, but progress might be visible in the coming months. This potential evolution could position Samsung’s HBM4 process for mass production by the year’s end, although the outcome is still awaited.
